Picosecond carrier dynamics in highly excited InGaAs/InP/InGaAsP/InP structures
- 1 November 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (11) , 1355-1358
- https://doi.org/10.1088/0268-1242/7/11/012
Abstract
The carrier dynamics in highly excited In1-xGaxAs/InP/In1-xGaxAsyP1-y/InP structures, with x=0.47 and y=0.9, have been investigated by the picosecond dynamic grating technique. The carrier recombination time tau R and the ambipolar diffusion coefficient Da at a non-equilibrium carrier density of about 1019 cm-3 have been determined for layers of InGaAs, InP and InGaAsP on InP substrates. The influence of many-body effects and reabsorption of emitted photons on the carrier diffusion at high excitation levels are discussed.Keywords
This publication has 15 references indexed in Scilit:
- Metal reactivity effects on the surface recombination velocity at InP interfacesApplied Physics Letters, 1990
- Picosecond relaxation mechanisms in highly excited GaInAsPJournal of Applied Physics, 1989
- Picosecond carrier dynamics near the gallium arsenide surfaceIEEE Journal of Quantum Electronics, 1989
- ps‐Laser Induced Transmission and Absorption in GaInAsP Epitaxial LayersPhysica Status Solidi (b), 1988
- Time-resolved photoluminescence of dense electron-hole plasmas in In-Ga-As-P filmsPhysical Review B, 1987
- Picosecond band filling in highly excited In-Ga-As-P filmsPhysical Review B, 1986
- Picosecond absorption saturation in GaInAsPElectronics Letters, 1984
- Ambipolar diffusion of high-density electrons and holes in Ge, Si, and GaAs: Many-body effectsPhysical Review B, 1982
- High-speed InP optoelectronic switchApplied Physics Letters, 1979
- Measurement of surface recombination velocity in semiconductors by diffraction from picosecond transient free-carrier gratingsApplied Physics Letters, 1978