Nanoscale ultra-thin-body silicon-on-insulator P-MOSFET with a SiGe/Si heterostructure channel
- 1 April 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (4) , 161-163
- https://doi.org/10.1109/55.830968
Abstract
We report the concept and demonstration of a nanoscale ultra-thin-body silicon on-insulator (SOI) P-channel MOSFET with a Si/sub 1-x/Ge/sub x//Si heterostructure channel. First, a novel lateral solid-phase epitaxy process is employed to form an ultra-thin-body that suppresses the short-channel effects. Negligible threshold voltage roll-off is observed down to a channel length of 50 nm. Second, a selective silicon implant that breaks up the interfacial oxide is shown to facilitate unilateral crystallization to form a single crystalline channel. Third, the incorporation of SiGe in the channel resulted in a 70% enhancement in the drive current.Keywords
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