The Mechanism for Defect Generation Studied by Photodegradation of A-Si:H Solar Cells Under Electrical Bias

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Abstract
The light induced degradation of a-Si:H p-i-n solar cells under electrical bias has been systematically studied. By comparing the results with the light intensity dependence of cell degradation under open circuit condition, we show that the only recombination mechanism, which can be consistent with the experimental data in both cases, is based on the bimolecular recombination between a free hole and a trapped electron at the “weak” bond site. Other possibilities for defect creation are also pointed out.