Effect of Orientation on Surface Charge Density at Silicon-Silicon Dioxide Interface
- 1 December 1965
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 4 (12)
- https://doi.org/10.1143/jjap.4.958
Abstract
The effect of the orientation of the silicon substrate on the surface charge density, N F B , at the silicon-silicon dioxide interface is studied. Surface oxidation of silicon is carried out at 1140°C in dry oxygen. The surface charge density is determined from the capacitance-voltage characteristics of the MOS diode. Measurements are made at 1 Mc/sec small singnal superposed on a dc bias. The orientation of silicon has a remarkable influence on N F B , and its magnitude becomes smaller in the order of (111), (211), (110), and (100) planes. In the case of (100) silicon substrate, the depletion of electrons at the silicon-silicon dioxide interface is observed.Keywords
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