Charge transient and optical absorption measurements of characteristic gap states in phosphorus doped a-Si:H
- 1 October 1984
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 68 (1) , 147-152
- https://doi.org/10.1016/0022-3093(84)90041-3
Abstract
No abstract availableKeywords
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