Structural and electric-field-induced anisotropy in zinc-blende bulk semiconductors and quantum wells - the bonding orbital approach
- 1 November 1997
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 12 (11) , 1378-1387
- https://doi.org/10.1088/0268-1242/12/11/009
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Dispersion and anisotropy of optical rectification in zinc blende quantum wellsJournal of the Optical Society of America B, 1996
- Giant Optical Anisotropy of Semiconductor Heterostructures with No Common Atom and the Quantum-Confined Pockels EffectPhysical Review Letters, 1996
- Optical rectification and terahertz emission in semiconductors excited above the band gapJournal of the Optical Society of America B, 1994
- Giant electropleochroism in GaAs-(Al,Ga)As heterostructures: The quantum-well Pockels effectPhysical Review Letters, 1992
- Empirical tight-binding calculation of dispersion in the second-order nonlinear optical constant for zinc-blende crystalsPhysical Review B, 1987
- Electronic states in semiconductor heterostructuresIEEE Journal of Quantum Electronics, 1986
- Energy-Band Theory of the Second-Order Nonlinear Optical Susceptibility of Crystals of Zinc-Blende SymmetryPhysical Review B, 1972
- Second-Order Optical Susceptibilities of III-V SemiconductorsPhysical Review B, 1969
- Calculation of Nonlinear Optical Susceptibilities Using Diagrammatic Perturbation TheoryReviews of Modern Physics, 1965
- Wave-Number-Dependent Dielectric Function of SemiconductorsPhysical Review B, 1962