Correlation of electrical carrier and atomic profiles of S implants in GaAs
- 1 March 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (3) , 1815-1817
- https://doi.org/10.1063/1.330594
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Ion-implanted Se in GaAsJournal of Applied Physics, 1980
- Chromium redistribution during thermal annealing of semi-insulating GaAs as a function of encapsulant and implant fluenceApplied Physics Letters, 1980
- Solid solubility of selenium in GaAs as measured by secondary ion mass spectrometryApplied Physics Letters, 1978
- Fast diffusion of elevated-temperature ion-implanted Se in GaAs as measured by secondary ion mass spectrometryApplied Physics Letters, 1978
- The role of elevated temperatures in the implantation of GaAsSolid-State Electronics, 1975