Raman spectra of shallow acceptors in quantum-well structures

We report resonant Raman spectra of the shallow acceptor Be in GaAs-${\mathrm{Al}}_{\mathrm{x}}$ ${\mathrm{Ga}}_{1\mathrm{-}\mathrm{x}}$As quantum-well structures. Samples preferentially doped at the center and at the edge of the wells with well widths in the range 70–165 Å were investigated. The data show transitions between acceptor levels derived from the bulk states 1$S_{3/2}$[${\Gamma }_8$] and 2$S_{3/2}$[${\Gamma }_8$]. Confinement-induced splittings of these levels have been observed. The results are in good agreement with recent calculations.