Quantisation of valence states observed in small Ag islands on the GaAs(110) surface
- 1 April 1994
- journal article
- Published by Elsevier in Surface Science
- Vol. 307-309, 321-327
- https://doi.org/10.1016/0039-6028(94)90413-8
Abstract
No abstract availableKeywords
This publication has 19 references indexed in Scilit:
- Photoemission from ultrathin metallic films: Quantum size effect, electron scattering, and film structurePhysical Review B, 1992
- Valence-band photoemission from a quantum-dot systemPhysical Review Letters, 1991
- Determination of the bulk band structure of Ag in Ag/Cu(111) quantum-well systemsPhysical Review B, 1990
- Quantum size effect detected by work function measurements during indium deposition on polycrystalline, texturized gold substrateVacuum, 1990
- Quantum well states in a metal-semiconductor system: CoSi2/Si(111)Thin Solid Films, 1990
- Probing interfacial properties with Bloch electrons: Ag on Cu(111)Physical Review B, 1989
- Quantum-Well States in a Metallic System: Ag on Au(111)Physical Review Letters, 1988
- Observation of film states and surface-state precursors for Ag films on Si(111)Physical Review B, 1986
- Room-temperature formation of the Ag/GaAs (110) interfaceJournal of Physics C: Solid State Physics, 1982
- Experimental study of quantum size effects in thin metal films by electron tunnelingPhysical Review B, 1975