A relaxation model for oscillations in semiconductors with double-carrier injection
- 16 May 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 5 (2) , 471-479
- https://doi.org/10.1002/pssa.2210050221
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Recombination oscillations in semiconductors with double-carrier injectionSolid-State Electronics, 1970
- Current oscillations in Zn-doped Si p-i-n diodesSolid-State Electronics, 1970
- Current Oscillations in Deep-level Doped SemiconductorsIBM Journal of Research and Development, 1969
- CURRENT OSCILLATIONS IN Co-DOPED Si p-i-n STRUCTURESApplied Physics Letters, 1967
- Space charge and oscillation effects in gold-doped silicon p-‘i’-n diodesSolid-State Electronics, 1967
- Electrical Oscillations in Silicon Compensated with Deep LevelsJournal of Applied Physics, 1966
- Gold as a recombination centre in siliconSolid-State Electronics, 1965
- OSCILLATIONS IN SEMICONDUCTORS DUE TO DEEP LEVELSApplied Physics Letters, 1963
- Double Injection in InsulatorsPhysical Review B, 1962
- Volume-Controlled, Two-Carrier Currents in Solids: The Injected Plasma CasePhysical Review B, 1961