Device charge-to-breakdown studies on a high-current implanter
- 1 April 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 55 (1-4) , 82-85
- https://doi.org/10.1016/0168-583x(91)96140-g
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Analysis techniques of charging damage studied on three different high-current ion implantersNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Hole trapping and breakdown in thin SiO2IEEE Electron Device Letters, 1986