Oxidation of silicon by ion implantation and laser irradiation
- 1 November 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (9) , 752-754
- https://doi.org/10.1063/1.92879
Abstract
[[abstract]]Q‐switched laser irradiation has been used to anneal O+‐implanted silicon to form SiO2 layers. Results of differential Fourier‐transformed infrared spectroscopy and transmission electron microscopy confirm the formation of oxide layers. Segregation of oxygen toward the surface was observed by secondary ion mass spectroscopy and correlated with resolidification velocities, which vary as a function of laser energy densities.[[fileno]]2030182010031[[department]]電機工程學Keywords
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