Self-Healing Breakdown Measurements of Pyrolytic Aluminum Oxide Films on Silicon

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Abstract
Self‐healing breakdown techniques are employed to study dielectric breakdown in pyrolytic aluminum oxide films on silicon substrates. The Al2O3 is prepared by chemical vapor deposition at low temperature (300–600°C) using Al isopropoxide as source material. Both weak‐spot breakdown and intrinsic breakdown in the absence of weak spots using Au–Al2O3–Si test capacitors are investigated. Intrinsic breakdown field strengths of 7.5×106 V/cm for Si+ on p‐type substrates and 6.9×106 V/cm for Si − on n‐type are observed and found to be independent of Al2O3 thickness and temperature. Weak‐spot breakdown is found to be associated with contamination of the silicon surface.

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