Defect structure of 〈100〉 dark lines in the active region of a rapidly degraded Ga1−xAlxAs LED
- 1 September 1977
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (9) , 3950-3952
- https://doi.org/10.1063/1.324244
Abstract
The 〈100〉 dark‐line defects (DLD’s) in the active region of a rapidly degraded Ga1−xAlxAs LED were observed by transmission electron microscopy (TEM). Dislocation networks, which contain dislocation dipoles and a number of dislocation loops, were associated with 〈100〉 DLD’s. The dipole extended in the 〈100〉 or 〈210〉 direction and was extrinsic in character; its Burgers vector was a/2 〈011〉 inclined at 45° to the junction plane. These results were very similar to those of GaAs‐Ga1−xAlxAs double‐heterostructure (DH) lasers.This publication has 4 references indexed in Scilit:
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- Defect structure of degraded GaAlAs-GaAs double heterojunction lasersPhilosophical Magazine, 1975
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