Band offsets at the CdS/CuInSe2 heterojunction
- 1 November 1993
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (18) , 2549-2551
- https://doi.org/10.1063/1.110429
Abstract
The traditional explanation for the successful electron‐hole separation in CdS/CuInSe2 solar cells rests on the assumption of a type‐II band lineup: The conduction‐band minimum is assumed to be on the CdS window while the valence‐band maximum is assumed to be localized on the CuInSe2 absorber. This picture of negative conduction‐band offset ΔEcet al. for CdS/CuInSe2 yielding ΔEc=+1.08 eV. Our first principles calculations yield for CdS/CuInSe2 ΔEc=+0.31 eV, hence, a type‐I band alignment. We challenge the published experimental value as being in error and point to the need of revising current solar cell device models that assume ΔEc<0.Keywords
This publication has 14 references indexed in Scilit:
- Theoretical and experimental studies of the ZnSe/CuInSe2 heterojunction band offsetApplied Physics Letters, 1993
- ZnO/CdS/CuInSe2 thin-film solar cells with improved performanceApplied Physics Letters, 1993
- Synchrotron-radiation photoemission study of CdS/heterojunction formationPhysical Review B, 1990
- CuInSe2/Cd(Zn)S solar cell modeling and analysisSolar Cells, 1986
- Local-Density-Functional Calculation of the Pressure-Induced Metallization of BaSe and BaTePhysical Review Letters, 1985
- Photoemission studies ofandand of their interfaces with Si and GePhysical Review B, 1985
- Direct confirmation of the conduction-band lineup in the CuInSe2-CdS heterojunction solar cellApplied Physics Letters, 1984
- Empirical rule to predict heterojunction band discontinuitiesJournal of Applied Physics, 1983
- CuInSe2/CdS heterojunction photovoltaic detectorsApplied Physics Letters, 1974
- Surface Properties of II-VI CompoundsPhysical Review B, 1967