Charge trapping on different cuts of a single-crystalline α-SiO2
- 1 August 1993
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 74 (3) , 1944-1948
- https://doi.org/10.1063/1.354778
Abstract
A scanning electron microscope is employed for the investigation of charging on different cuts of an α‐SiO2. A method for the determination of trapped charges is proposed. Charging on different cuts is observed to decrease in the order of z cut, 30° cut, 45° cut, and 60° cut of the α‐SiO2. This phenomenon is related to permittivity, defect density, and stress of the samples. Details of the experiments and the method of charge determination are given.This publication has 11 references indexed in Scilit:
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