Chemical vapor deposition of cobalt silicide
- 29 August 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (9) , 740-742
- https://doi.org/10.1063/1.100558
Abstract
We have deposited polycrystalline cobalt silicide films by chemical vapor deposition using Co2(CO)8 or HCo(CO)4 as the Co source and SiH4 or Si2H6 as the Si source. The Co:Si ratio of the films is controlled by changing the deposition temperature, and CoSi2 stoichiometry is obtained at 300 °C using SiH4 or at 225 °C when Si2H6 is the Si precursor. Carbon or oxygen contamination of the films is <0.5 at. % at deposition temperatures above 200 °C. Resistivities of films deposited near CoSi2 stoichiometry are typically 200 μΩ cm and drop to 40 μΩ cm upon annealing at 900 °C.Keywords
This publication has 12 references indexed in Scilit:
- Electrical transport properties of transition-metal disilicide filmsJournal of Applied Physics, 1987
- Low Pressure Chemical Vapor Deposition of Tantalum SilicideJournal of the Electrochemical Society, 1986
- Thermal and chemical stability of Schottky metallization on GaAsApplied Physics Letters, 1985
- Excimer laser-induced chemical vapor deposition of titanium silicideJournal of Applied Physics, 1985
- Laser-induced chemical vapor deposition of titanium silicide filmsJournal of Vacuum Science & Technology A, 1985
- Chemical vapour deposition of metal silicides from organometallic compounds with silicon-metal bondsVacuum, 1985
- Plasma-enhanced CVD of titanium silicideJournal of Vacuum Science & Technology B, 1984
- Properties of Molybdenum Silicide Film Deposited by Chemical Vapor DepositionJournal of the Electrochemical Society, 1983
- Refractory silicides for integrated circuitsJournal of Vacuum Science and Technology, 1980
- The Chemistry of Metal Carbonyls. II. Preparation and Properties of Cobalt Hydrocarbonyl1Journal of the American Chemical Society, 1953