Effects of two-dimensional confinement on the optical properties of InGaAs/InP quantum wire structures
- 12 September 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (11) , 995-997
- https://doi.org/10.1063/1.100052
Abstract
We describe fabrication and photoluminescence excitation of InGaAs/InP quantum wires with a lateral dimension of ∼350 Å. Transverse confinement results in the splitting of the n=1 heavy hole‐electron transition. Three of these levels are observed in the excitation spectrum. The exciton energies agree with the theoretical predictions based on a new method of solving the two‐dimensional effective mass Schrödinger equation.Keywords
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