Monolithic Ka band VCO using quarter micron GaAs MESFETs and integrated high-Q varactors
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 103-106
- https://doi.org/10.1109/mcs.1990.110949
Abstract
High-Q GaAs abrupt varactor diodes and 0.25- mu m GaAs MESFETs have been combined on a semiinsulating GaAs substrate for millimeter-wave monolithic IC applications. Based on the measured series resistance and capacitance, the diodes have a calculated Q at -4 V, 50 MHz of approximately 19000. The MESFETs have a measured gain of >6 dB at 35 GHz, with extrapolated values for f/sub t/ and f/sub max/ of 32 GHz and 78 GHz, respectively. A monolithic Ka-band voltage-controlled oscillator using these devices has been built and tested. Output powers of 60 mW with 70 MHz of tuning bandwidth and 40 mW with 120 MHz of tuning bandwidth have been measured at 32 GHz.<>Keywords
This publication has 1 reference indexed in Scilit:
- A 35 GHz monolithic MESFET LNAPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003