High-barrier height metal-insulator-semiconductor diodes on n-InP

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Abstract
Metal‐insulator‐semiconductor diodes were fabricated using Pd, Ni, and Au contacts on n‐InP covered by a 40‐Å chemically grown oxide. The oxide had a refractive index of 1.4–1.6 with a composition of mainly In2O3+some InPO3 near the surface and mixed oxide+InP near the interface. Pd devices gave the highest‐barrier height of 0.80 eV and the lowest reverse saturation current density of 3×10−8 A/cm2. Current‐voltage‐temperature and capacitance‐voltage‐temperature data gave temperature dependence of barrier height and revealed an interface state recombination current mechanism with surface states 0.4 eV above the valence‐band level. Richardson plots gave good straight lines when empirically corrected using barrier height divided by ideality factor.