High-pressure thermal oxidation of InP in steam
- 15 January 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (2) , 506-509
- https://doi.org/10.1063/1.340271
Abstract
The thermal oxidation of InP in dry oxygen has previously been shown to result in mixed oxide layers, even when grown at pressures as high as 500 atm. This appears to be caused by the slow diffusion of P and O2 through the oxide relative to In. This paper reports on the oxidation of InP in steam at one and 500 atm. Growth in one atm yields an oxide with a composition very similar to those grown in dry oxygen, indicating similar growth kinetics. However, at 500 atm of steam the growth kinetics are changed dramatically and result in a uniform InPO4 layer, suggesting that at high pressure, the H2O diffuses rapidly to the oxide-InP interface where the oxidation reaction occurs.This publication has 6 references indexed in Scilit:
- High pressure thermal oxide/InP interfaceJournal of Vacuum Science & Technology B, 1985
- Quantitative XPS: The calibration of spectrometer intensity—energy response functions. 1—The establishment of reference procedures and instrument behaviourSurface and Interface Analysis, 1984
- Composition and structure of thermal oxides of indium phosphideJournal of Applied Physics, 1983
- The In‐P‐O Phase Diagram: Construction and ApplicationsJournal of the Electrochemical Society, 1982
- Thermal oxidation of InPJournal of Applied Physics, 1980
- The Oxidation of Silicon in Dry Oxygen, Wet Oxygen, and SteamJournal of the Electrochemical Society, 1963