Composition and structure of thermal oxides of indium phosphide
- 1 July 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (7) , 4134-4140
- https://doi.org/10.1063/1.332547
Abstract
The thermal oxidation of InP has been studied for growth temperatures of 400 to 700 °C using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) profiles and x-ray diffraction. For T650 °C the oxide composition is primarily InPO4 throughout the layer although the roughness of the high temperature oxide may distort the XPS sputter profiles. From x-ray diffraction data, the oxides grown at T<650 °C appear noncrystalline. At T=700 °C the oxide is crystalline InPO4.This publication has 15 references indexed in Scilit:
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