Oxygen penetration into silicon carbide ceramics during oxidation
- 30 June 1985
- journal article
- Published by Elsevier in Ceramics International
- Vol. 11 (2) , 39-44
- https://doi.org/10.1016/0272-8842(85)90007-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Isotope Labeling Studies of the Oxidation of Silicon at 1000° and 1300°CJournal of the Electrochemical Society, 1984
- Static Fatigue Limit for Sintered Silicon Carbide at Elevated TemperaturesJournal of the American Ceramic Society, 1983
- Boron Redistribution in Sintered α‐SiC During Thermal OxidationJournal of the American Ceramic Society, 1981
- Fracture Toughness and High‐Temperature Slow Crack Growth inSiCJournal of the American Ceramic Society, 1980
- KIcand Delayed Fracture Measurements on Hot‐Pressed SiCJournal of the American Ceramic Society, 1979
- Creep of reaction-bonded silicon nitrideJournal of Materials Science, 1978
- Crack propagation and fracture in silicon carbideJournal of Materials Science, 1975
- Effect of Alumina Content on the Oxidation of Hot‐Pressed Silicon CarbideJournal of the American Ceramic Society, 1975
- Subcritical Crack Growth in Boron‐Doped SiCJournal of the American Ceramic Society, 1975