Effects of Si Incorporation and Electrical Activation on Intersubband Optical Absorption in MBE-grown GaAs/AlGaAs Multiple Quantum Well Structures
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- The calibration of the strength of the localized vibrational modes of silicon impurities in epitaxial GaAs revealed by infrared absorption and Raman scatteringJournal of Applied Physics, 1989
- Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivityApplied Physics Letters, 1987
- Si incorporation probabilities and depth distributions in Ga1−xAlxAs films grown by molecular-beam epitaxyJournal of Applied Physics, 1986
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- Comprehensive analysis of Si-doped (): Theory and experimentsPhysical Review B, 1984
- Influence of alloy composition, substrate temperature, and doping concentration on electrical properties of Si-doped n-Alx Ga1−x As grown by molecular beam epitaxyJournal of Electronic Materials, 1984
- Heavy doping of GaAs and AlGaAs with silicon by molecular beam epitaxyJournal of Applied Physics, 1983
- The effect of growth conditions on Si incorporation in molecular beam epitaxial GaAsApplied Physics Letters, 1981
- On the absorption of infrared radiation by electrons in semiconductor inversion layersSolid State Communications, 1976
- Self-compensation of donors in high-purity GaAsApplied Physics Letters, 1975