The negatively charged vacancy in silicon: Hyperfine interactions from endor measurements
- 28 February 1983
- journal article
- Published by Elsevier in Physica B+C
- Vol. 116 (1-3) , 224-229
- https://doi.org/10.1016/0378-4363(83)90251-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Wavefunctions of the divacancy in siliconJournal of Physics C: Solid State Physics, 1981
- Negative-U Properties for Point Defects in SiliconPhysical Review Letters, 1980
- Divacancy in silicon: Hyperfine interactions from electron-nuclear double resonance measurementsPhysical Review B, 1976