Aspects of the Theory of Impact Ionization in Semiconductors (I)

This publication has 101 references indexed in Scilit:

• The first 70 semiconductor Auger processes
  Solid-State Electronics, 1978
• An investigation into the behaviour of trapping centres in microplasmas
  Solid-State Electronics, 1975
• Use of a Schottky barrier to measure impact ionization coefficients in semiconductors
  Solid-State Electronics, 1973
• On detailed balance between Auger recombination and impact ionization in semiconductors
  Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1972
• Thermal emission and capture of electrons at sulfur centers in silicon
  Solid-State Electronics, 1971
• Effect of Compensation on Breakdown Fields in Homogeneous Semiconductors
  Physical Review B, 1967
• Variation of Junction Breakdown Voltage by Charge Trapping
  Physical Review B, 1965
• Multiplication in Siliconp−nJunctions
  Physical Review B, 1965
• Problems related to p-n junctions in silicon
  Solid-State Electronics, 1961
• Theorie der Stoßionisation durch Elektronen in isolierenden Kristallen
  The European Physical Journal A, 1954