Comparative structural and electrical characterization of scanning-electron- and pulsed-laser-annealed silicon

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Abstract
Silicon implanted with As+, P+, or B+ ions has been annealed by the multiple‐scan electron beam method and by use of pulsed radiation from a Q‐switched ruby laser. Electron microscope examination of specimen cross section gives direct comparison of the initial implantation damage with the structures produced by the different annealing methods. Sample electric conductivities after annealing are also compared. This work highlights the differences between the liquid‐ and solid‐phase annealing mechanisms of the pulsed‐laser and scanned‐electron‐beam methods, respectively.
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