Thin oxides with in situ native oxide removal [n-MOSFETs]
- 1 September 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 18 (9) , 417-419
- https://doi.org/10.1109/55.622515
Abstract
We have studied the inversion layer mobility of n-MOSFET's with thin-gate oxide of 20 to 70 /spl Aring/. Direct relationship of electron mobility to oxide/channel interface roughness was obtained from measured mobility of MOSFET's and high-resolution TEM. By using a low-pressure oxidation process with native oxide removed in situ prior to oxidation, atomically smooth interface of oxide/channel was observed by high-resolution TEM for oxide thicknesses of 11 and 38 /spl Aring/. The roughness increased to one to two monolayers of Si in a 55-/spl Aring/ oxide. Significant mobility improvement was obtained from these oxides with smoother interface than that from conventional furnace oxidation. Mobility reduction with decreasing oxide thickness was observed in the 20- and 35-/spl Aring/ oxide, with the same atomically smooth oxide/channel interface. This may be due to the remote Coulomb scattering from gate electrode or the gate field variation from poly-gate/oxide interface roughness.Keywords
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