Doping behavior of In0.1Ga0.9N codoped with Si and Zn
- 26 January 1999
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 197 (1-2) , 78-83
- https://doi.org/10.1016/s0022-0248(98)00940-3
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Band edge versus deep luminescence of InxGa1−xN layers grown by molecular beam epitaxyApplied Physics Letters, 1998
- Cubic (In,Ga)N layers grown on GaAs(001) by dc plasma-assisted molecular beam epitaxyJournal of Applied Physics, 1997
- Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy compositionApplied Physics Letters, 1997
- Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nmApplied Physics Letters, 1997
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- The Composition Pulling Effect in InGaN Growth on the GaN and AlGaN Epitaxial Layers Grown by MOVPEMRS Proceedings, 1996
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995
- Zn-doped InGaN growth and InGaN/AlGaN double-heterostructure blue-light-emitting diodesJournal of Crystal Growth, 1994
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994
- Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxyApplied Physics Letters, 1991