Beta measurement and beta requirement in I/sup 2/L gates
- 1 February 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 17 (1) , 93-95
- https://doi.org/10.1109/JSSC.1982.1051695
Abstract
A new approach to beta measurement in the inversely operated I/SUP 2/L transistor is described, one that avoids arbitrary definitions and terminal-condition specifications. The authors deactivate the lateral p-n-p by symmetrical biasing so that direct measurement of n-p-n base current becomes possible. Further measurements demonstrate the validity of this approach, and also determine the beta necessary for a desired saturation voltage.Keywords
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