The kinetics of silicon dioxide chemical vapour deposition II: The model of the process
- 1 August 1985
- journal article
- Published by Elsevier in Surface Technology
- Vol. 25 (4) , 315-325
- https://doi.org/10.1016/0376-4583(85)90083-4
Abstract
No abstract availableKeywords
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- Growth and etching of silicon in chemical vapour deposition systems; The influence of thermal diffusion and temperature gradientJournal of Crystal Growth, 1975
- A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal ReactorJournal of the Electrochemical Society, 1970