The dip-dry technique for preparing photosensitive Sb2S3 films
- 1 June 1982
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 92 (4) , 309-314
- https://doi.org/10.1016/0040-6090(82)90153-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Optical properties of amorphous and crystalline Sb2S3 thin filmsThin Solid Films, 1979
- Properties of CdS films and Cu2S-CdS junctions prepared by chemical printingThin Solid Films, 1979
- Studies on sintered photoconductive layers of antimony trisulphideJournal of Physics D: Applied Physics, 1970
- Measurement of Forbidden Energy Gap of Semiconductors by Diffuse Reflectance TechniquePhysica Status Solidi (b), 1970
- Photoelectronic Analysis of High Resistivity Crystals: (a) GaAs, (b) Sb2S3Journal of Applied Physics, 1960