Influence of disorder on ferromagnetism in diluted magnetic semiconductors
- 16 April 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 65 (16) , 165216
- https://doi.org/10.1103/physrevb.65.165216
Abstract
Influence of disorder in the concentration of magnetic ions on the ferromagnetic phase transition in diluted (III,Mn)V semiconductors is investigated analytically. The regime of small disorder is addressed, and the enhancement of the critical temperature by disorder is found both in the mean-field approximation and from the analysis of the zero-temperature spin stiffness.
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This publication has 15 references indexed in Scilit:
- Two-component approach for thermodynamic properties in diluted magnetic semiconductorsPhysical Review B, 2002
- Theory of magnetic properties and spin-wave dispersion for ferromagnetic (Ga,Mn)AsPhysical Review B, 2001
- Bhatt, Bogdanovich, and Sarachik Reply:Physical Review Letters, 2001
- Mean-field theory of magnetic properties of Mn III1−V semiconductorsPhysica E: Low-dimensional Systems and Nanostructures, 2001
- Limits on the Curie temperature of (III,Mn)V ferromagnetic semiconductorsApplied Physics Letters, 2001
- A ferromagnetic III–V semiconductor: (Ga,Mn)AsSolid State Communications, 2001
- Theory of Diluted Magnetic Semiconductor FerromagnetismPhysical Review Letters, 2000
- Properties of ferromagnetic III–V semiconductorsJournal of Magnetism and Magnetic Materials, 1999
- Making Nonmagnetic Semiconductors FerromagneticScience, 1998
- Transport properties and origin of ferromagnetism in (Ga,Mn)AsPhysical Review B, 1998