Metastabilities in the electrical characteristics of CIGS devices: Experimental results vs theoretical predictions
- 1 May 2007
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 515 (15) , 6142-6146
- https://doi.org/10.1016/j.tsf.2006.12.038
Abstract
No abstract availableThis publication has 14 references indexed in Scilit:
- Light- and bias-induced metastabilities in Cu(In,Ga)Se2 based solar cells caused by the (VSe-VCu) vacancy complexJournal of Applied Physics, 2006
- Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductorsPhysical Review B, 2005
- Bulk and metastable defects in CuIn1−xGaxSe2 thin films using drive-level capacitance profilingJournal of Applied Physics, 2004
- Reversible changes of the fill factor in the ZnO/CdS/Cu(In,Ga)Se2 solar cellsSolar Energy Materials and Solar Cells, 2003
- The ‘defected layer’ and the mechanism of the interface-related metastable behavior in the ZnO/CdS/Cu(In,Ga)Se2 devicesThin Solid Films, 2003
- Baseline Cu(In,Ga)Se2 device production: Control and statistical significanceSolar Energy Materials and Solar Cells, 2001
- Transient capacitance spectroscopy of defect levels in CIGS devicesThin Solid Films, 2000
- A model for the open circuit voltage relaxation in Cu(In,Ga)Se2heterojunction solar cellsThe European Physical Journal Applied Physics, 1999
- Persistent photoconductivity in Cu(In,Ga)Se2 heterojunctions and thin films prepared by sequential depositionApplied Physics Letters, 1998
- The metastable changes of the trap spectra of CuInSe2-based photovoltaic devicesJournal of Applied Physics, 1996