Effect of neutron and gamma irradiation on the low-frequency noise in GaAs m.e.s.f.e.t.s

14 September 1978

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 14 (19) , 637-639
https://doi.org/10.1049/el:19780428

Abstract

Low-frequency noise in GaAs m.e.s.f.e.t.s has been measured from 2 kHz to 1.5 MHz as a function of fast neutron fluence and gamma dose. From 5 × 10¹³ to 8 × 10¹⁴ n/cm², the noise increases appreciably, with the noise enhancement from 2 to 10 kHz attributed to generation-recombination noise in the gate depletion layer and from 500 kHz to 1.5 MHz to channel trapping effects. There was comparably little change with gamma irradiation up to doses above 10⁷ rad (Si).

Keywords

NEUTRON IRRADIATION
LOW FREQUENCY NOISE
GENERATION RECOMBINATION NOISE
GAAS MESFETS
GATE DEPLETION LAYER
CHANNEL TRAPPING EFFECTS
NOISE ENHANCEMENT
GAMMA DOSE
GAMMA IRRADIATION
FAST NEUTRON FLUENCE

This publication has 1 reference indexed in Scilit:

Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors
Published by Elsevier ,1975