A sub 40-nm body thickness n-type FinFET

This publication has 2 references indexed in Scilit:

• A folded-channel MOSFET for deep-sub-tenth micron era
  Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
• On the universality of inversion layer mobility in Si MOSFET's: Part II-effects of surface orientation
  IEEE Transactions on Electron Devices, 1994