The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy
- 31 August 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (9) , 1278-1280
- https://doi.org/10.1063/1.122148
Abstract
In this letter, we studied the effect of the high-temperature Si/N treatment of the nitridated sapphire surface followed by the deposition of a low-temperature GaN nucleation layer on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy. It was shown that the nucleation layer, initially flat and continuous, converts to wide isolated truncated hexagonal islands having {1–101} facet planes and a top (0001) plane, after heating up to 1150 °C. The coalescence of these GaN islands yields a reduction of the total number of extended defects from the 1010–1011 cm−2 range usually obtained down to the low 109 cm−2 range for the best samples.Keywords
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