Interpretation of the electron capture by multiphonon emission at native levels in LPE gallium arsenide
- 10 March 1982
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 15 (7) , L175-L179
- https://doi.org/10.1088/0022-3719/15/7/003
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The determination of the Huang-Rhys factor for a deep level in a semiconductorJournal of Physics C: Solid State Physics, 1981
- A luminescence band associated with the main electron trap in bulk gallium arsenideApplied Physics Letters, 1981
- Contribution of the Radiative Mechanism to Electron Capture at the B Centre in Gallium ArsenidePhysica Status Solidi (b), 1980
- Photoconductivity in n-type GaAs:O associated with the deep level at 0.4 eVJournal of Physics C: Solid State Physics, 1980
- Electron capture by multiphonon emission at the B centre in gallium arsenideJournal of Physics C: Solid State Physics, 1979
- Nonradiative capture and recombination by multiphonon emission in GaAs and GaPPhysical Review B, 1977
- Theory of Radiationless Relaxation of Rare-Earth Ions in CrystalsThe Journal of Chemical Physics, 1972
- The energy gap law for radiationless transitions in large moleculesMolecular Physics, 1970
- Application of the Quantum-Defect Method to Optical Transitions Involving Deep Effective-Mass-Like Impurities in SemiconductorsPhysical Review B, 1969
- Phonon-Broadened Impurity Spectra. I. Density of StatesPhysical Review B, 1965