Wavelength-modulated photocapacitance spectroscopy
- 1 March 1980
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (3) , 1863-1865
- https://doi.org/10.1063/1.327762
Abstract
Derivative deep‐level spectroscopy was achieved with wavelength‐modulated photocapacitance employing MOS structures and Schottky barriers. The energy position and photoionization characteristics of deep levels of melt‐grown GaAs and the Cr level in high‐resistivity GaAs were determined. The advantages of this method over existing methods for deep‐level spectroscopy are discussed.This publication has 12 references indexed in Scilit:
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