Evaluation of Carbon and Oxygen Content of Silicon Wafers Using Infrared Absorption
- 1 March 1980
- journal article
- research article
- Published by SAGE Publications in Applied Spectroscopy
- Vol. 34 (2) , 167-171
- https://doi.org/10.1366/0003702804730574
Abstract
Room temperature Fourier transform infrared measurements on some contaminated silicon wafers are presented. Use of subtractive techniques readily allows both carbon and oxygen concentrations of about 0.1 ppm atomic to be obtained in relatively short measurement times (about 1 min), providing an adequate “pure” wafer is used as the reference standard.Keywords
This publication has 8 references indexed in Scilit:
- The Elimination of Interference Fringes from Infrared SpectraApplied Spectroscopy, 1978
- Simultaneous determination of the total content of boron and phosphorus in high-resistivity silicon by ir spectroscopy at low temperaturesApplied Physics Letters, 1975
- Bestimmung von parts per billion sauerstoff in silizium durch eichung der IR-absorption bei 77°KSolid-State Electronics, 1973
- Determination of parts per billion of oxygen in siliconSolid-State Electronics, 1970
- Vibrational absorption of carbon and carbon-oxygen complexes in siliconJournal of Physics and Chemistry of Solids, 1969
- Vibrational absorption of carbon in siliconJournal of Physics and Chemistry of Solids, 1965
- Lattice Absorption Bands in SiliconProceedings of the Physical Society, 1959
- Infrared Absorption and Oxygen Content in Silicon and GermaniumPhysical Review B, 1956