Effects of surface states on relaxation phenomena in MOS capacitors
- 30 April 1976
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 19 (4) , 325-330
- https://doi.org/10.1016/0038-1101(76)90030-7
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Transient responses of a pulsed MIS-capacitorSolid-State Electronics, 1970
- On the determination of surface recombination velocity from the transient response of MIS structuresSolid-State Electronics, 1970
- On the separation of bulk and surface components of lifetime using the pulsed MOS capacitorSolid-State Electronics, 1970
- On the deeply depleted MOS capacitorProceedings of the IEEE, 1970
- Bulk lifetime determination using an MOS capacitorProceedings of the IEEE, 1970
- Different mechanisms affecting the inversion layer transient responseIEEE Transactions on Electron Devices, 1968
- On the determination of minority carrier lifetime from the transient response of an MOS capacitorIEEE Transactions on Electron Devices, 1967
- Minority carrier lifetime determination from inversion layer transient responseIEEE Transactions on Electron Devices, 1967
- Experimental study of semiconductor surface conductivitySurface Science, 1966
- Carrier concentration and minority carrier lifetime measurement in semiconductor epitaxial layers by the mos capacitance methodSolid-State Electronics, 1966