Correlation Between Ti-Silicided Shallow Junction Diode Leakage and Titaniun Diffusion during TISI2 Fornation
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- A study of grown-in impurities in silicon by deep-level transient spectroscopySolid-State Electronics, 1983
- Titanium in silicon as a deep level impuritySolid-State Electronics, 1979
- Reverse current-voltage characteristics of metal-silicide Schottky diodesSolid-State Electronics, 1970