Behaviour of γ-ray detectors from high purity germanium at low temperature
- 1 February 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 19 (1) , 270-278
- https://doi.org/10.1109/TNS.1972.4326521
Abstract
γ-ray spectrometers prepared from high purity germanium have been studied at low temperature down to 5° K. If sufficient bias voltage was applied the same energy resolution at 5°K than at 77°K was found. At lower bias voltage, below 10°K, the resolution deteriorated rapidly due to the appearance of a slow rising component (up to several microseconds) in the pulses. This behaviour seems to be related to the effect on the signal of the resistance and capacitance of the undepleted region -the resistivity becoming significant at low temperature due to carrier freeze-out on the primary shallow donors-rather than to the effectγ of carrier trapping by shallow level impurities.Keywords
This publication has 8 references indexed in Scilit:
- High-purity germanium crystal growingNuclear Instruments and Methods, 1971
- FIELD-ASSISTED REEMISSION OF CHARGE CARRIERS FROM SHALLOW IMPURITY CENTERS IN GERMANIUMApplied Physics Letters, 1970
- Gamma Ray Detectors Made from High Purity GermaniumIEEE Transactions on Nuclear Science, 1970
- Trapping and detrapping effects in lithium-drifted germanium and silicon detectorsNuclear Instruments and Methods, 1970
- Performance of Si(Li) detectors over a wide temperature rangeNuclear Instruments and Methods, 1969
- PERFORMANCE OF Ge(Li) DETECTORS IN THE TEMPERATURE RANGE 5.0 TO 170°KApplied Physics Letters, 1967
- Geometric Control of Surface Leakage Current and Noise in Lithium Drifted Silicon Radiation DetectorsIEEE Transactions on Nuclear Science, 1966
- Investigation of the Anomaly in the Response of Silicon Semiconductor Radiation Detectors at Low TemperaturesIEEE Transactions on Nuclear Science, 1965