Harmonic mixing characteristics of metal-barrier-metal junctions as predicted by electron tunneling
- 15 November 1974
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (10) , 544-547
- https://doi.org/10.1063/1.1655303
Abstract
The bias dependence of the nonlinear mixing characteristics of metal‐barrier‐metal junction currents is deduced assuming an electron tunneling model. The difference‐frequency beat voltage at frequency ω1−nω2, where n is an integer and ω1 and ω2 are the assumed frequencies of two induced currents, is found to have n zeros as the diode bias is varied. Recent experimental observations have demonstrated such characteristics.Keywords
This publication has 13 references indexed in Scilit:
- Radiation of difference frequencies produced by mixing in metal-barrier-metal diodesApplied Physics Letters, 1974
- Optical detection in thin-film metal-oxide-metal diodesApplied Physics Letters, 1974
- ac electron tunneling at infrared frequencies: Thin-film M-O-M diode structure with broad-band characteristicsApplied Physics Letters, 1974
- Detection of optical and infrared radiation with DC-biased electron-tunneling metal-barrier-metal diodesIEEE Journal of Quantum Electronics, 1973
- Generation of infrared radiation in a metal-to-metal point-contact diode at synthesized frequencies of incident fields: a high-speed broad-band light modulatorApplied Physics Letters, 1972
- The response of metal-oxide-metal diodes subjected to a DC biasIEEE Journal of Quantum Electronics, 1972
- Extension of Absolute Frequency Measurements to the cw He–Ne Laser at 88 THz (3.39 μ)Applied Physics Letters, 1972
- IMPROVED COUPLING TO INFRARED WHISKER DIODES BY USE OF ANTENNA THEORYApplied Physics Letters, 1970
- The imperfectly conducting cylindrical transmitting antennaIEEE Transactions on Antennas and Propagation, 1966
- Electric Tunnel Effect between Dissimilar Electrodes Separated by a Thin Insulating FilmJournal of Applied Physics, 1963