Surface and Interface Electronic Structure Calculations with Empirical Tight Binding Models
- 1 April 1987
- journal article
- Published by IOP Publishing in Physica Scripta
- Vol. 35 (4) , 504-509
- https://doi.org/10.1088/0031-8949/35/4/016
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- Theory of Layered Structures Formed With Discrete Crystals: Quantum Wells Sandwiches and SuperlatticesPhysica Scripta, 1986
- Theory of Incomplete Crystals and Crystalline InterfacesPhysica Scripta, 1986
- Highly convergent schemes for the calculation of bulk and surface Green functionsJournal of Physics F: Metal Physics, 1985
- Quick iterative scheme for the calculation of transfer matrices: application to Mo (100)Journal of Physics F: Metal Physics, 1984
- Effective two-dimensional Hamiltonian at surfacesPhysical Review B, 1983
- Electronic structure of the Ge-GaAs and Ge-ZnSe (100) interfacesPhysical Review B, 1980
- Scattering-theoretic approach to the electronic structure of semiconductor surfaces: The (100) surface of tetrahedral semiconductors and SiPhysical Review B, 1978
- Spin-orbit splitting in crystalline and compositionally disordered semiconductorsPhysical Review B, 1977
- Electronic structure at an abrupt GaAs–Ge interfaceJournal of Vacuum Science and Technology, 1977
- Self-Consistent Calculation of the Electronic Structure at an Abrupt GaAs-Ge InterfacePhysical Review Letters, 1977