Next-generation, high-efficiency III-V multijunction solar cells
- 11 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 998-1001
- https://doi.org/10.1109/pvsc.2000.916054
Abstract
Next-generation solar cell approaches such as AlGaInP/GaAs/GaInNAs/Ge 4-junction cells, lattice-mismatched GaInP/GaInAs/Ge, concentrator cells, and improved 3-junction device structures hold the promise of greater efficiency than even today's highly successful multijunction cells. Wide-bandgap tunnel junctions, improved heterointerfaces, and other device structure improvements have resulted in several record-efficiency GaInP/GaAs/Ge cell results. Triple-junction (3J) cells grown in this work have demonstrated 29.3% efficiency for space (AMO, 1 sun). Space concentrator 3J cells have efficiency up to 30.0% at low concentration (AMO, 7.6 suns), and terrestrial concentrator cells grown at Spectrolab and processed at NREL have reached 32.3% (AM1.5D, 440 suns).Keywords
This publication has 12 references indexed in Scilit:
- High-efficiency radiation-resistant InGaP/GaAs tandem solar cellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Projected performance of three- and four-junction devices using GaAs and GaInPPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Triple-junction solar cell efficiencies above 32%: the promise and challenges of their application in high-conceniration-ratio PV systemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Metamorphic GaInP/GaInAs/Ge solar cellsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- 25.5% efficient Ga/sub 0.35/In/sub 0.65/P/Ga/sub 0.83/In/sub 0.17/As tandem solar cells grown on GaAs substratesIEEE Electron Device Letters, 2000
- High C-doping of MOVPE grown thin AlxGa1−xAs layers for AlGaAs/GaAs interband tunneling devicesJournal of Electronic Materials, 2000
- MOVPE grown Ga1−xInxAs solar cells for GaInP/GaInAs tandem applicationsJournal of Electronic Materials, 2000
- Development and characterization of high-efficiency Ga/sub 0.5/In/sub 0.5/P/GaAs/Ge dual- and triple-junction solar cellsIEEE Transactions on Electron Devices, 1999
- InGaAsN solar cells with 1.0 eV band gap, lattice matched to GaAsApplied Physics Letters, 1999
- AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell applicationJournal of Applied Physics, 1993