Initial evaporation rates from GaAs during rapid thermal processing
- 15 February 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (4) , 1168-1176
- https://doi.org/10.1063/1.339976
Abstract
The initial rates of evaporation of Ga and As from the surface of single-crystal GaAs during rapid thermal processing (RTP) have been determined in the temperature range from 600 to 750 °C. Absolute vaporization rates for capless annealing of GaAs were measured by collecting the evaporated species on a copper film, which condenses 50%–100% of the evaporated material. Initial evaporation rates during RTP are shown to be in agreement with the maximum predicted rates based on the Hertz–Knudsen equation. In a second set of experiments, the preferential loss of arsenic for GaAs-GaAs proximity annealing was measured using ion channeling. All experimental results are interpreted in terms of a model which we develop for capless and proximity annealing based on the kinetic theory of gases.This publication has 16 references indexed in Scilit:
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