Two-Dimensional Growth of GaN on Various Substrates by Gas Source Molecular Beam Epitaxy Using RF-Radical Nitrogen Source
- 1 February 1995
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 34 (2S)
- https://doi.org/10.1143/jjap.34.1153
Abstract
Two-dimensional layer-by-layer growth conditions for GaN epitaxial layers by gas source molecular beam epitaxy (MBE) using a 13.56 MHz RF-radical nitrogen source were systematically investigated. As the growth rate was decreased, the reflection high-energy electron diffraction patterns of the GaN epitaxial layers grown on (0001) Al2O3 were changed from spotty patterns to streak ones in the earlier stage of GaN growth. It was clearly indicated that the lower growth rate (R2O3, (001) MgO and (001) GaAs substrates. The surface morphology dependence on substrate materials was also described.Keywords
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