Electron Tunneling Through p-Type GaAs–Pb Point Contacts
- 1 May 1970
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 41 (6) , 2651-2656
- https://doi.org/10.1063/1.1659277
Abstract
We have studied the variation with bias (to ± 150 mV) of the I, dV/dI, and d2I/dV2 of p‐type GaAs point contacts on Pb single crystals at liquid‐He temperatures. The results are examined and are compared with those obtained from p‐type GaAs–Pb film tunnel junctions fabricated by conventional techniques. A small reduction of the energy gap and a shift in bias energy of the phonon‐induced structure in the superconducting Pb tunneling characteristics have been observed, and we suggest these are due to pressure at the point contact. The effects of this pressure on the p‐type GaAs tunneling characteristics are also observed and some qualitative explanations are suggested.This publication has 11 references indexed in Scilit:
- Theory of dirty superconductorsPublished by Elsevier ,2002
- Evidence for Hole-To-Phonon Interaction from Tunneling Measurements in GaAs-Pb JunctionsPhysical Review Letters, 1968
- Molecular Spectroscopy Using Schottky-Barrier TunnelingPhysical Review Letters, 1968
- Pressure-induced energy shifts in the phonon spectrum of Pb observed by electron-tunnelingPhysics Letters A, 1967
- A NEW METHOD FOR POINT TUNNELING INTO SUPERCONDUCTORSApplied Physics Letters, 1967
- Magnetic Interactions in Rare-Earth Metals from Inelastic Neutron ScatteringPhysical Review Letters, 1967
- THE DENSITY OF STATES IN METAL-SEMICONDUCTOR TUNNELINGApplied Physics Letters, 1967
- Electron Tunneling in Metal-Semiconductor BarriersPhysical Review B, 1966
- Theory of the Anisotropic Energy Gap in Superconducting LeadPhysical Review B, 1965
- Investigation by Electron Tunneling of the Superconducting Energy Gaps in Nb, Ta, Sn, and PbPhysical Review B, 1962