A preliminary study of impurities and defects in Si-MBE layers
- 2 February 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 81 (1-4) , 326-331
- https://doi.org/10.1016/0022-0248(87)90412-x
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Investigations on hydrophilic and hydrophobic silicon (100) wafer surfaces by X-ray photoelectron and high-resolution electron energy loss-spectroscopyApplied Physics A, 1986
- Si-Beam Radiation Cleaning in Molecular-Beam EpitaxyJapanese Journal of Applied Physics, 1985
- Advanced Techniques to Decrease Defect Density in Molecular Beam Epitaxial Silicon FilmsJapanese Journal of Applied Physics, 1985
- Accelerated ion doping in Si MBEJournal of Vacuum Science & Technology A, 1984
- Defect evaluation of Si MBE filmJournal of Crystal Growth, 1983
- Deposition Techniques and Heat Transfer Properties of Porous AluminumJournal of the Electrochemical Society, 1982
- Defect Etch for Silicon EvaluationJournal of the Electrochemical Society, 1979
- Role of metallic contamination in the formation of ’’saucer’’ pit defects in epitaxial siliconJournal of Vacuum Science and Technology, 1977